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参数资料
| 型号： | NE34018-T1-63 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封装： | PLASTIC, SUPERMINI-4 |
| 文件页数： | 1/16页 |
| 文件大小： | 77K |
| 代理商： | NE34018-T1-63 |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11618EJ4V0DS00 (4th edition)
Date Published September 2000 NS CP(K)
Printed in Japan
1996, 2000
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE34018
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
The mark
shows major revised points.
FEATURES
Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz
High associated gain: Ga = 16 dB TYP. @ f = 2 GHz
Gate width: Wg = 400
m
4-pin super minimold package
Tape & reel packaging only available
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE34018-T1
4-pin super minimold
8 mm wide embossed taping
Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
Qty 3 kpcs/reel
NE34018-T2
8 mm wide embossed taping
Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE34018).
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGSO
3.0
V
Gate to Drain Voltage
VGDO
3.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
150
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
65 to +125
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE34018-T1-64 | 功能描述:MOSFET L-S Band Lo No Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NE34018-T1-64-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE34018-T1-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE34018-T2 | 制造商:NEC 制造商全称:NEC 功能描述:L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE34018-TI-63-A | 制造商:CEL 制造商全称:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
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