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参数资料
| 型号： | NE6500179A |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封装： | 79A, 4 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 39K |
| 代理商： | NE6500179A |
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10021EJ01V0DS (1st edition)
(Previous No. P15107EJ1V0DS00)
Date Published November 2001 CP(K)
Printed in Japan
N-CHANNEL GaAs MES FET
NE6500179A
1 W L-BAND POWER GaAs MES FET
NEC Corporation 1999
NEC Compound Semiconductor Devices 2001
PRELIMINARY DATA SHEET
The mark
!
! shows major revised points.
DESCRIPTION
The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high
linear gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
High output power: PO (1 dB) = 30.0 dBm TYP.
High linear gain: GL = 12.0 dB TYP.
High power added efficiency:
ηadd = 50 % TYP. @ VDS = 6.0 V, IDset = 200 mA, f = 1.9 GHz
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE6500179A-T1
79A
12 mm wide embossed taping
Qty 1 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE6500179A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE6500379 | 制造商:NEC 制造商全称:NEC 功能描述:3W L, S-BAND POWER GaAs MESFET |
| NE6500379A | 功能描述:射频GaAs晶体管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-EVPW26 | 功能描述:射频GaAs晶体管 For NE6500379A 2.6G RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-T1 | 功能描述:射频GaAs晶体管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:NE6500379A-T1-A |
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