- 您现在的位置：买卖IC网 > PDF目录299552 > NE6500179A L BAND, GaAs, N-CHANNEL, RF POWER, MESFET PDF资料下载
参数资料
| 型号： | NE6500179A |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封装： | 79A, 4 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 39K |
| 代理商： | NE6500179A |
NE6500179A
SAFETY INFORMATION ON THIS PRODUCT
Caution
GaAs Products
The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
Do not destroy or burn the product.
Do not cut or cleave off any part of the product.
Do not crush or chemically dissolve the product.
Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-528-0301
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-528-0302
NEC Electron Devices European Operations
http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0110
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com
Business issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
Technical issue
相关PDF资料 |
PDF描述 |
|---|---|
| NEF0100151B0C | 1-OUTPUT 15 W DC-DC REG PWR SUPPLY MODULE |
| NES230 | 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-5 |
| NES2427P-140 | 2 CHANNEL, S BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| NES65A | 12 A, 80 V, NPN, Si, POWER TRANSISTOR |
| NESG3031M14-T3-AFB | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE6500379 | 制造商:NEC 制造商全称:NEC 功能描述:3W L, S-BAND POWER GaAs MESFET |
| NE6500379A | 功能描述:射频GaAs晶体管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-EVPW26 | 功能描述:射频GaAs晶体管 For NE6500379A 2.6G RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-T1 | 功能描述:射频GaAs晶体管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:NE6500379A-T1-A |
发布紧急采购，3分钟左右您将得到回复。