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参数资料
| 型号： | NE6500179A |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封装： | 79A, 4 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 39K |
| 代理商： | NE6500179A |
Preliminary Data Sheet PG10021EJ01V0DS
6
NE6500179A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235
°C or below,
Time: 30 seconds or less (at 210
°C or higher),
Count: 2 times or less,
Exposure: limit: None
Note
IR35-00-2
Partial Heating
Pin temperature: 260
°C or below,
Time: 5 seconds or less (per pin row)
Exposure: limit: None
Note
Note After opening the dry pack, store it at 25
°C or less and 65 % RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE6500379 | 制造商:NEC 制造商全称:NEC 功能描述:3W L, S-BAND POWER GaAs MESFET |
| NE6500379A | 功能描述:射频GaAs晶体管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-EVPW26 | 功能描述:射频GaAs晶体管 For NE6500379A 2.6G RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-T1 | 功能描述:射频GaAs晶体管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6500379A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:NE6500379A-T1-A |
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