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参数资料
| 型号： | NILMS4501NR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSF N-CH 9.5A 24V ESD 4-LLP |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 电流感测 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 6V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-DFN |
| 供应商设备封装： | 4-PLLP |
| 包装： | 带卷 (TR) |
NILMS4501N
Power MOSFET with
Current Mirror FET
24 V, 9.5 A, N?Channel, ESD Protected,
1:250 Current Mirror, SO?8 Leadless
http://onsemi.com
N?Channel MOSFET with 1:250 current mirror device utilizing the
latest ON Semiconductor technology to achieve low figure of merit
while keeping a high accuracy in the linear region. This device takes
advantage of the latest leadless QFN package to improve thermal
V DSS
24 V
R DS(on) Typ
12 m W @ 4.5 V
I D MAX
9.5 A
transfer.
Mirror FET
Features
? Current Sense MOSFET
? " 15% Current Mirror Accuracy
? ESD Protected on the Main and the Mirror MOSFET
? Low Gate Charge
? Pb?Free Package is Available*
Applications
Gate
N?Channel with Current
Drain
Main
? DC?DC Converters
? Voltage Regulator Modules
? Small DC Motor Controls
Sense
PLLP4
CASE 508AA
Source
MARKING
DIAGRAM
4501N
AYWW
G
4501N
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
PIN CONNECTIONS
Sense (1)
Drain (4)
Source (2)
Gate (3)
(Bottom View)
ORDERING INFORMATION
Device
NILMS4501NR2
NILMS4501NR2G
Package
PLLP4
PLLP4
(Pb?Free)
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
May, 2006 ? Rev. 4
1
Publication Order Number:
NILMS4501N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NILMS4501NR2G | 功能描述:MOSFET MI 9.5A 24V CURR MIR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIM2-434.075-10 | 制造商:RADIOMETRIX 制造商全称:RADIOMETRIX 功能描述:UHF Narrow Band Transceiver |
| NIM2-434.650-10 | 制造商:RADIOMETRIX 功能描述:TRANSCEIVER 434.65MHZ 制造商:RADIOMETRIX 功能描述:RF MOD, TXRX, FM, 434.65MHZ, 10KBPS |
| NIM2-434.65-10 | 制造商:RADIOMETRIX 制造商全称:RADIOMETRIX 功能描述:UHF Narrow Band Transceiver |
| NIM2R-434.075-10 | 制造商:RADIOMETRIX 制造商全称:RADIOMETRIX 功能描述:UHF Narrow Band Transceiver |
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