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参数资料
| 型号： | NILMS4501NR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSF N-CH 9.5A 24V ESD 4-LLP |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 电流感测 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 6V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-DFN |
| 供应商设备封装： | 4-PLLP |
| 包装： | 带卷 (TR) |
NILMS4501N
MAIN MOSFET MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Gate?to?Source Voltage
Drain Current (Note 1)
Continuous @ T A = 25 ° C
Continuous @ T A = 100 ° C
Pulsed (t p v 10 s)
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Thermal Resistance
Junction?to?Ambient (Note 1)
Junction?to?Ambient (Note 2)
Junction?to?Ambient (t p v 10 s) (Note 3)
Operating Junction and Storage Temperature
Single Pulse Drain?to?Source Avalanche (V DD = 24 V, V GS = 10 V,
I L = 9.5 A, L = 1.0 mH, R G = 25 W )
Electrostatic Discharge Capability
Human Body Model
Charged Device Model
Symbol
V DSS
V GS
I D
I D
I DM
P D
P D
R q JA
R q JA
R q JA
T J , T STG
E AS
ESD HBM
CMD
Value
24
" 10
9.5
6.7
14
2.7
1.4
55
110
25
?55 to 175
50
4000
2000
Unit
V
V
Adc
Adc
Apk
W
° C/W
° C
mJ
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0821 in sq).
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) and 200 LFM airflow.
MAIN MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 V, I D = 250 m A)
Temperature Coefficient (Positive)
V (BR)DSS
24
?
29
23
?
?
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m A
(V DS = 24 V, V GS = 0 V)
(V DS = 24 V, V GS = 0 V, T J = 125 ° C)
(V DS = 24 V, V GS = 0 V, T J = 175 ° C)
Gate?Body Leakage Current
I GSS
?
?
?
0.05
1.0
30
1.0
100
100
(V GS = 3.0 V, V DS = 0 V)
(V GS = 9.0 V, V DS = 0 V)
?
?
40
1.3
100
10
nA
m A
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = 250 m A)
Threshold Temperature Coefficient (Negative)
Static Drain?to?Source On?Resistance (Note 4)
(V GS = 10 V, I D = 6.0 A, T J @ 25 ° C)
(V GS = 10 V, I D = 6.0 A, T J @ 125 ° C)
(V GS = 10 V, I D = 6.0 A, T J @ 175 ° C)
Static Drain?to?Source On?Resistance (Note 4)
(V GS = 4.5 V, I D = 6.0 A, T J @ 25 ° C)
(V GS = 4.5 V, I D = 6.0 A, T J @ 125 ° C)
(V GS = 4.5 V, I D = 6.0 A, T J @ 175 ° C)
Main/Mirror MOSFET Current Ratio
(V GS = 4.5 V, I D = 1.0 A)
(V GS = 4.5 V, I D = 1.0 A, T A = 175 ° C)
Forward Transconductance (Note 4)
V GS(th)
R DS(on)
R DS(on)
I RAT
g FS
1.1
?
?
?
?
?
?
?
212
?
15
1.60
?5.0
9.0
12
14
12
16
18
250
268
23
2.0
?
13
17
20
16
20
24
287
?
?
V
mV/ ° C
m W
m W
?
Mhos
(V DS = 6.0 V, I D = 6.0 A)
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
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