参数资料
型号: NILMS4501NR2
厂商: ON Semiconductor
文件页数: 5/9页
文件大小: 0K
描述: IC MOSF N-CH 9.5A 24V ESD 4-LLP
产品变化通告: Product Obsolescence 06/Oct/2006
标准包装: 2,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 电流感测
漏极至源极电压(Vdss): 24V
电流 - 连续漏极(Id) @ 25° C: 9.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 25nC @ 10V
输入电容 (Ciss) @ Vds: 1500pF @ 6V
功率 - 最大: 1.4W
安装类型: 表面贴装
封装/外壳: 4-DFN
供应商设备封装: 4-PLLP
包装: 带卷 (TR)
NILMS4501N
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
V GS = 10 V
1E6
V GS = 0 V
2.0
I D = 3 A
1E5
T J = 175 ° C
1000
1.5
1.0
0.5
100
10
1.0
0.1
T J = 125 ° C
T J = 25 ° C
0
?50
0
50
100
150
200
0.01
0
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 7. On?Resistance Variation with
Temperature
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 8. Drain?To?Source Leakage
Current versus Voltage
2000
1800
1600
I D = 1 A
V GS = 4.5 V
T J = ?55 ° C
T J = 25 ° C
500
450
T J = ?55 ° C
I D = 1 A
V SENSE = 0 V
V SOURCE = 0 V
1400
1200
1000
800
600
400
T J = 125 ° C
T J = 175 ° C
400
350
300 T J = 175 ° C
250
T J = 25 ° C
T J = 125 ° C
200
0
0
2
4
6
8
10
12
14
16
200
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R SENSE , EXTERNAL RESISTOR VALUE ON SENSE PIN ( W )
Figure 9. Current Ratio versus R SENSE
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 10. Current Ratio versus V GS
I D = 1 A
2500
2000
T J = ?55 ° C
I D = 1 A
V SENSE = 0 V
V GS = 4.5 V
2000
1800
V SOURCE = 0 V
1600 V GS = 4.5 V
?55 ° C
25 ° C
125 ° C
175 ° C
1400
1500
1000
500
25 ° C
125 ° C
1200
1000
800
600
400
T J = 175 ° C
0
?0.01 ?0.005 0
0.005
0.01 0.015
0.02 0.025 0.03
200
0
?0.01
?0.005
0
0.005
0.01
0.015
0.02
V SOURCE , VOLTAGE DROP FROM SOURCE PIN TO GROUND (V)
Figure 11. I RATIO versus V SOURCE
V SENSE , VOLTAGE DROP FROM SENSE PIN TO GROUND (V)
Figure 12. Current Ratio versus V SENSE
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