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| 型号： | NP22N055SLE-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 22A TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 22A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1100pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HLE, NP22N055ILE, NP22N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
NP22N055ILE
These products are N-channel MOS Field Effect
Transistors designed for high current switching
applications.
FEATURES
? Channel temperature 175 degree rated
? Super low on-state resistance
R DS(on)1 = 37 m ? MAX. (V GS = 10 V, I D = 11 A)
R DS(on)2 = 45 m ? MAX. (V GS = 5.0 V, I D = 11 A)
? Low C iss : C iss = 730 pF TYP.
? Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
NP22N055HLE
Note
NP22N055SLE
Note Not for new design.
PACKAGE
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
(TO-251)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
V DSS
V GSS
I D(DC)
55
± 20
± 22
V
V
A
Drain Current (Pulse)
Note1
I D(pulse)
± 55
A
Total Power Dissipation (T A = 25°C)
Total Power Dissipation (T C = 25°C)
P T
P T
1.2
45
W
W
(TO-252)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Note2
Note2
I AS
E AS
T ch
T stg
14 / 5
19 / 25
175
–55 to +175
A
mJ
°C
°C
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, R G = 25 ? , V GS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
3.33
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14136EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP22N055-SLE-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| NP-22-U7/8-HP | 制造商:Bahco 功能描述: |
| NP23 | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 2 BOX MT BLANK, BR |
| NP2300SAMCT3G | 功能描述:硅对称二端开关元件 LOW CAP TSPD SURGE DEVICE RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| NP2300SAT3G | 功能描述:硅对称二端开关元件 50A 230V TSPD SMB RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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