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参数资料
| 型号： | NT1GT72U8PA0BE-3C |
| 厂商： | NANYA TECHNOLOGY CORP |
| 元件分类： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 |
| 封装： | ROHS COMPLIANT, DIMM-240 |
| 文件页数： | 7/20页 |
| 文件大小： | 396K |
| 代理商： | NT1GT72U8PA0BE-3C |
NT512T72U89A5BD / NT512T72U89A2BN / NT512T72U89A0BE
NT1GT72U8PA3BD / NT1GT72U8PA2BN / NT1GT72U8PA0BE
Preliminary
NT2GT72U4NA1BD / NT2GT72U4NA1BN
512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72
REV 0.6
15
02/27/2006
NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Environmental Requirements
Symbol
Parameter
Rating
Units
Note
TOPR
Operating temperature
-
1
HOPR
Operating humidity (relative)
10 to 90
%
2
TSTG
Storage temperature
-50 to +100
C
2
HSTG
Storage humidity (without condensation)
5 to 95
%
2
PBAR
Barometric pressure (operating & Storage)
105 to 69
K pascal
2
Note:
1.
The designer must meet the case temperature specifications for individual module components.
2.
Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and device
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
ODT values
ODT provides termination to DQ/CB signals and has programmable values that are dynamically turned on in response to ODT signals
provided by the AMB. DDR values are programmed via MRS/EMRS settings.
Density
Speed
Transaction
AMB
Rank 1 ODT
Rank 2 ODT
Write
OFF
75
N/A
512MB
533/667
Read
65
OFF
N/A
Write
OFF
150
1GB
533/667
Read
65
OFF
Write
OFF
150
2GB
533/667
Read
65
OFF
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