参数资料
型号: NT5DS64M4AW-75B
厂商: Electronic Theatre Controls, Inc.
英文描述: 256Mb Double Data Rate SDRAM
中文描述: 256MB双数据速率SDRAM
文件页数: 46/78页
文件大小: 1534K
代理商: NT5DS64M4AW-75B
NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
REV 1.1
12/2001
46
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Truth Table 2: Clock Enable (CKE)
1. CKE n is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. Command n is the command registered at clock edge n, and action n is a result of command n.
4. All states and sequences not shown are illegal or reserved.
Current State
CKE n-1
CKEn
Command n
Action n
Notes
Previous
Cycle
Current
Cycle
Self Refresh
L
L
X
Maintain Self-Refresh
Self Refresh
L
H
Deselect or NOP
Exit Self-Refresh
1
Power Down
L
L
X
Maintain Power-Down
Power Down
L
H
Deselect or NOP
Exit Power-Down
All Banks Idle
H
L
Deselect or NOP
Precharge Power-Down Entry
All Banks Idle
H
L
Auto Refresh
Self Refresh Entry
Bank(s) Active
H
L
Deselect or NOP
Active Power-Down Entry
H
H
See “Truth Table 3: Current State
Bank n - Command to Bank n (Same
Bank)” on page 47
1. Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (t
XSNR
) period. A minimum of
200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.
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