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| 型号： | NTA4151PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 760MA SOT-416 |
| 产品目录绘图： | MOSFET SOT-323, SOT-416 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 760mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 360 毫欧 @ 350mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 450mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 156pF @ 5V |
| 功率 - 最大： | 301mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75，SOT-416 |
| 供应商设备封装： | SC-75，SOT-416 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTA4151PT1GOSDKR |
NTA4151P, NTE4151P
Small Signal MOSFET
? 20 V, ? 760 mA, Single P ? Channel,
Gate Zener, SC ? 75, SC ? 89
Features
? Low R DS(on) for Higher Efficiency and Longer Battery Life
? Small Outline Package (1.6 x 1.6 mm)
? SC ? 75 Standard Gullwing Package
? ESD Protected Gate
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) TYP
0.26 W @ ? 4.5 V
0.35 W @ ? 2.5 V
0.49 W @ ? 1.8 V
I D MAX
? 760 mA
Applications
?
?
?
?
High Side Load Switch
DC ? DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
P ? Channel MOSFET
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Value
Units
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 20
± 6.0
V
V
S
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
SC ? 75
SC ? 89
Steady State
Steady State
I D
P D
? 760
301
313
mA
mW
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Pulsed Drain Current tp =10 m s
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
Gate ? to ? Source ESD Rating ?
(Human Body Model, Method 3015)
I DM
T J ,
T STG
I S
T L
ESD
± 1000
? 55 to
150
? 250
260
1800
mA
° C
mA
° C
V
2
1
SC ? 75 / SOT ? 416
CASE 463
STYLE 5
3
2
1
SC ? 89
3
Drain
xx M G
G
1 2
Gate Source
THERMAL RESISTANCE RATINGS
Junction ? to ? Ambient ? Steady State (Note 1) R q JA ° C/W
SC ? 75 415
SC ? 89 400
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
CASE 463C
xx = Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 7
1
Publication Order Number:
NTA4151P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTA4151PT1G | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 760mA SC-75 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET, -20V, 760mA SC-75 |
| NTA4151PT1H | 制造商:ON Semiconductor 功能描述:PFET SC75 20V 760MA TR - Tape and Reel |
| NTA4153N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 |
| NTA4153NT1 | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTA4153NT1G | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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