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| 型号： | NTA4151PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 760MA SOT-416 |
| 产品目录绘图： | MOSFET SOT-323, SOT-416 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 760mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 360 毫欧 @ 350mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 450mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 156pF @ 5V |
| 功率 - 最大： | 301mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75，SOT-416 |
| 供应商设备封装： | SC-75，SOT-416 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTA4151PT1GOSDKR |
NTA4151P, NTE4151P
PACKAGE DIMENSIONS
SC ? 89, 3 ? LEAD
CASE 463C ? 03
ISSUE C
1
A
? X ?
3
2
B ? Y ? S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 463C ? 01 OBSOLETE, NEW STANDARD 463C ? 02.
M
K
G
2 PL
D
0.08 (0.003) M
C
3 PL
X Y
J
N
? T ?
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
M
N
S
MILLIMETERS
MIN NOM MAX
1.50 1.60 1.70
0.75 0.85 0.95
0.60 0.70 0.80
0.23 0.28 0.33
0.50 BSC
0.53 REF
0.10 0.15 0.20
0.30 0.40 0.50
1.10 REF
??? ??? 10 _
??? ??? 10 _
1.50 1.60 1.70
MIN
0.059
0.030
0.024
0.009
0.004
0.012
???
???
0.059
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.006 0.008
0.016 0.020
0.043 REF
??? 10 _
??? 10 _
0.063 0.067
SOLDERING FOOTPRINT*
H
H
L
G
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent ? Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 Toll Free USA/Canada
Fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 Toll Free USA/Canada
Email : orderlit@onsemi.com
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81 ? 3 ? 5817 ? 1050
http://onsemi.com
6
ON Semiconductor Website : www.onsemi.com
Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTA4151P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTA4151PT1G | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 760mA SC-75 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET, -20V, 760mA SC-75 |
| NTA4151PT1H | 制造商:ON Semiconductor 功能描述:PFET SC75 20V 760MA TR - Tape and Reel |
| NTA4153N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 |
| NTA4153NT1 | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTA4153NT1G | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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