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| 型号： | NTA4151PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 760MA SOT-416 |
| 产品目录绘图： | MOSFET SOT-323, SOT-416 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 760mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 360 毫欧 @ 350mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 450mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 156pF @ 5V |
| 功率 - 最大： | 301mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75，SOT-416 |
| 供应商设备封装： | SC-75，SOT-416 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTA4151PT1GOSDKR |
NTA4151P, NTE4151P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = ? 250 m A
? 20
V
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
I DSS
I GSS
V GS = 0 V, V DS = ? 16 V
V DS = 0 V, V GS = ± 4.5 V
? 1.0
$ 1.0
? 100
$ 10
nA
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V DS = V GS , I D = ? 250 m A
V GS = ? 4.5 V, I D = ? 350 mA
? 0.45
0.26
? 1.2
0.36
V
W
V GS = ? 2.5 V, I D = ? 300 mA
V GS = ? 1.8 V, I D = ? 150 mA
0.35
0.49
0.45
1.0
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 250 mA
0.4
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = ? 5.0 V
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 0.3 A
156
28
18
2.1
0.125
0.325
0.5
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
td (ON)
t r
td (OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 200 mA, R G = 10 W
8.0
8.2
29
20.4
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = ? 250 mA
? 0.72
? 1.1
V
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTA4151PT1G
NTA4151PT1H
NTE4151PT1G
Marking
TN
TN
TM
Package
SC ? 75
(Pb ? Free)
SC ? 75
(Pb ? Free)
SC ? 89
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTA4151PT1G | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 760mA SC-75 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET, -20V, 760mA SC-75 |
| NTA4151PT1H | 制造商:ON Semiconductor 功能描述:PFET SC75 20V 760MA TR - Tape and Reel |
| NTA4153N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 |
| NTA4153NT1 | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTA4153NT1G | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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