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| 型号： | NTD110N02RT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 12.5A DPAK |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.6 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3440pF @ 20V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD110N02RT4OSDKR |
NTD110N02R, STD110N02R
Power MOSFET
24 V, 110 A, N ? Channel DPAK
Features
? Planar HD3e Process for Fast Switching Performance
? Low R DS(on) to Minimize Conduction Loss
? Low C iss to Minimize Driver Loss
? Low Gate Charge
? Optimized for High Side Switching Requirements in
High ? Efficiency DC ? DC Converters
? AEC Q101 Qualified ? STD110N02R
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
24 V
http://onsemi.com
R DS(on) TYP
4.1 m W @ 10 V
N ? Channel
D
I D MAX
110 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
24
± 20
Unit
V
V
G
S
3
Thermal Resistance ? Junction ? to ? Case
Total Power Dissipation @ T C = 25 ° C
Drain Current
? Continuous @ T C = 25 ° C, Chip
? Continuous @ T C = 25 ° C
Limited by Package
? Continuous @ T A = 25 ° C
Limited by Wires
? Single Pulse (t p = 10 m s)
R q JC
P D
I D
I D
I D
I D
1.35
110
110
110
32
110
° C/W
W
A
A
A
A
4
1 2
3
CASE 369AA
1
2
CASE 369D
4
Thermal Resistance
? Junction ? to ? Ambient (Note 1)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
52
2.88
17.5
° C/W
W
A
DPAK
(Surface Mount)
STYLE 2
DPAK
(Straight Lead)
STYLE 2
4
Drain
Thermal Resistance
? Junction ? to ? Ambient (Note 2)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc,
I L = 15.5 Apk, L = 1.0 mH, R G = 25 W )
R q JA
P D
I D
T J , T stg
E AS
100
1.5
12.5
? 55 to
175
120
° C/W
W
A
° C
mJ
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
3
Source
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, (1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
1
Gate
2
Drain
Y = Year
WW = Work Week
T110N2 = Device Code
G = Pb ? Free Package
1 2 3
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 10
1
Publication Order Number:
NTD110N02R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD110N02RT4G | 功能描述:MOSFET 24V 110A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD12 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTD12N06L | 制造商:ON Semiconductor 功能描述: |
| NTD12N08/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:80 V Power MOSFET |
| NTD12N10 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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