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| 型号： | NTD25P03L1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 25A IPAK |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 25A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1260pF @ 25V |
| 功率 - 最大： | 75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD25P03L1OS |
NTD25P03L, STD25P03L
Power MOSFET
? 25 Amp, ? 30 Volt
Logic Level P ? Channel DPAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes. The
http://onsemi.com
source ? to ? drain diode recovery time is comparable to a discrete fast
recovery diode.
Features
? S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC ? Q101 Qualified and
PPAP Capable
?
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
? 30 V
R DS(on) Typ
51 m W @ 5.0 V
P ? Channel
D
I D Max
? 25 A
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
? Bridge Circuits
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
4
Drain
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (tp ≤ 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Single Pulse (t p ≤ 10 m s)
V DSS
V GS
V GSM
I D
I DM
? 30
" 15
" 20
? 25
? 75
V
V
Vpk
A
Apk
1 2
3
4
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
Total Power Dissipation @ T A = 25 ° C
P D
75
W
Operating and Storage Temperature Range
T J , T stg
? 55 to
+150
° C
4
4
Drain
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc,
Peak I L = 20 Apk, L = 1.0 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, (1/8 in from case for 10 seconds)
E AS
R q JC
R q JA
R q JA
T L
200
1.65
67
120
260
mJ
° C/W
° C
1
2
3
DPAK ? 3
CASE 369D
STYLE 2
1 2 3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
Y = Year
WW = Work Week
25P03L = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 4
1
Publication Order Number:
NTD25P03L/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD25P03L1G | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD25P03LG | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD25P03LG | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -30V -25A D-PAK 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET, -30V, -25A, D-PAK |
| NTD25P03LRL | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD25P03LRLG | 功能描述:MOSFET PFET 30V 25A LL TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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