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| 型号： | NTD32N06T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 32A DPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1725pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTD32N06T4GOS |
NTD32N06
Power MOSFET
32 Amps, 60 Volts, N?Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb?Free Packages are Available
? Smaller Package than MTB36N06V
? Lower R DS(on)
? Lower V DS(on)
? Lower Total Gate Charge
? Lower and Tighter V SD
? Lower Diode Reverse Recovery Time
? Lower Reverse Recovery Stored Charge
V (BR)DSS
60 V
http://onsemi.com
R DS(on) TYP
26 m W
N?Channel
D
I D MAX
32 A
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
MARKING
DIAGRAMS
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
4
Drain
Drain?to?Gate Voltage (R GS = 10 M W )
Gate?to?Source Voltage, Continuous
? Non?Repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
V DGR
V GS
V GS
I D
I D
I DM
P D
T J , T stg
60
" 20
" 30
32
22
90
93.75
0.625
2.88
1.5
?55 to
Vdc
Vdc
Adc
Apk
W
W/ ° C
W
W
° C
1 2
3
4
4
DPAK
CASE 369C
STYLE 2
DPAK?3
1
Gate
2
Drain
4
Drain
3
Source
+175
CASE 369D
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C (Note 3)
(V DD = 50 Vdc, V GS = 10 Vdc, L = 1.0 mH,
I L(pk) = 25 A, V DS = 60 Vdc, R G = 25 W )
Thermal Resistance ? Junction?to?Case
E AS
R q JC
313
1.6
mJ
° C/W
1
2
3
STYLE 2
1
2
3
? Junction?to?Ambient (Note 1)
? Junction?to?Ambient (Note 2)
R q JA
R q JA
52
100
Gate Drain Source
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T L
260
° C
32N06
A
= Device Code
= Assembly Location
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
Y
WW
= Year
= Work Week
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 ″ pad size,
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in 2 ).
3. Repetitive rating; pulse width limited by maximum junction temperature.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2004
August, 2004 ? Rev. 3
1
Publication Order Number:
NTD32N06/D
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| NTD3808N-1G | 功能描述:MOSFET N-CH 16V 12A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTD3808N-35G | 功能描述:MOSFET N-CH 16V 12A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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