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参数资料
| 型号： | NTD3808NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 16V 12A DPAK |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 16V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.8 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1660pF @ 12V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD3808N
Power MOSFET
16 V, 76 A, Single N-Channel, DPAK/IPAK
Features
? Trench Technology
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb-Free Devices
Applications
? DC-DC Converters
? Low Side Switching
V (BR)DSS
16 V
http://onsemi.com
R DS(ON) MAX
5.8 m W @ 10 V
8.5 m W @ 4.5 V
D
I D MAX
76 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
16
Unit
V
G
Gate-to-Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
± 16
17
13
2.6
V
A
W
S
N-CHANNEL MOSFET
4
4
4
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
12
9.1
1.3
A
W
1 2
3
1
2 3
1
2
3
R q JA (Note 2)
CASE 369AA
CASE 369AC
CASE 369D
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
76
59
52
A
W
DPAK
(Bent Lead)
STYLE 2
3 IPAK IPAK
(Straight Lead) (Straight Lead
DPAK)
R q JC (Note 1)
MARKING DIAGRAMS
Pulsed Drain Current
t p =10 m s
T A = 25 ° C
I DM
152
A
& PIN ASSIGNMENTS
Current Limited by Package
Operating Junction and Storage
Temperature
T A = 25 ° C
I DmaxPkg
T J ,
T STG
35
-55 to
+175
A
° C
4
Drain
4
Drain
4
Drain
Source Current (Body Diode)
Drain to Source dV/dt
I S
dV/dt
51
6
A
V/ns
1 Drain 3
Single Pulse Drain-to-Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 14 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
29.4
260
mJ
° C
2
1 2 3
Gate Source Gate Drain Source
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Gate Drain Source
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
3808N
G
= Year
= Work Week
= Device Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NTD3808N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTD3813NT4G | MOSFET N-CH 16V 9.6A DPAK |
| NTD3817NT4G | MOSFET N-CH 16V 7.6A DPAK |
| NTD40N03R-1G | MOSFET N-CH 25V 7.8A IPAK |
| NTD4302G | MOSFET N-CH 30V 8.4A DPAK |
| NTD4804N-1G | MOSFET N-CH 30V 14.5A IPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD3813N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK |
| NTD3813N-1G | 功能描述:MOSFET N-CH 16V 9.6A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTD3813N-35G | 功能描述:MOSFET N-CH 16V 9.6A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTD3813NT4G | 功能描述:MOSFET N-CH 16V 9.6A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTD3817N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK |
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