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参数资料
| 型号： | NTE3116 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Bar Graph Display |
| 中文描述： | 条形图显示 |
| 文件页数： | 2/2页 |
| 文件大小： | 20K |
| 代理商： | NTE3116 |
Electro–Optical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Forward Voltage
NTE3115, NTE3117
NTE3116
Luminous Intensity (Unit Average)
Pulsed Luminous Intensity (NTE3116 Only)
Peak Emission Wavelength
NTE3115
NTE3116
NTE3117
Spectral Line Half Width
NTE3115, NTE3117
NTE3116
Dynamic Resistance, Segment
NTE3115, NTE3117
NTE3116
Capacitance
NTE3115, NTE3117
NTE3116
Switching Time
Reverse Voltage
Test Conditions
Min
Typ Max Unit
I
F
= 10mA
–
–
2.0
2.2
–
–
2.5
3.0
–
–
V
V
I
F
= 10mA, Note 1
I
F
= 60mA peak, 1:6 DF
510
710
μ
cd
μ
cd
–
–
–
630
562
585
–
–
–
nm
nm
nm
–
–
40
30
–
–
nm
nm
I
F
= 20mA
–
–
26
12
–
–
V = 0, f = 1MHz
–
–
–
35
40
500
–
–
–
–
–
pF
pF
ns
V
I
F
= 10mA
I
R
= 100
μ
A
6.0
Note 1. The average Luminous Intensity is obtained by summing the Luminous Intensity of each seg-
ment and dividing by the total number of segments. The standard of measurement is the
Photo Research Corp.
“
Spectra
”
Microcandela Meter (Model IV
–
D) corrected for wave-
length. Intensity will not vary more than
±
33.3% between all segments within a unit.
Pin
Output
D1 Anode
D2 Anode
D3 Anode
D4 Anode
D5 Anode
D6 Anode
D7 Anode
D8 Anode
D9 Anode
D10 Anode 20
Pin
11
12
13
14
15
16
17
18
19
Output
D10 Cathode
D9 Cathode
D8 Cathode
D7 Cathode
D6 Cathode
D5 Cathode
D4 Cathode
D3 Cathode
D2 Cathode
D1 Cathode
1
2
3
4
5
6
7
8
9
10
1.000 (25.4)
.380
(9.65)
.300
(7.62)
.100 (2.54)
.150
(3.81)
.320
(8.12)
No. 1 Pin
Index
相关PDF资料 |
PDF描述 |
|---|---|
| NTE3117 | Bar Graph Display |
| NTE311 | Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF |
| NTE3122 | Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington |
| NTE3123 | Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington |
| NTE312 | N-Channel Silicon Junction Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE3117 | 制造商:NTE Electronics 功能描述:LED-10-SEGMENT YELLOW BAR GRAPH DISPLAY W/SEPARATE ANODE AND CATHODES |
| NTE312 | 制造商:NTE Electronics 功能描述:JFET N-CHANNEL 30V TO-92 CASE VHF AMP/MIX 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:JFET N CHANNEL -25V TO-106 制造商:NTE Electronics 功能描述:N CHANNEL JFET -30V TO-92 制造商:NTE Electronics 功能描述:JFET-N-CH VHF AMP/MIX 制造商:NTE Electronics 功能描述:N CHANNEL JFET, -30V, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss Min:5mA; Zero Gate Voltage Drain Current Idss Max:15mA; Gate-Source Cutoff Voltage Vgs(off) Max:-6V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans JFET N-CH 3-Pin TO-92 |
| NTE312 | 制造商:NTE Electronics 功能描述:N CHANNEL JFET, -30V, TO-92 |
| NTE3120 | 制造商:NTE Electronics 功能描述:NPN-SI PHOTOTRANSISTOR 制造商:NTE Electronics 功能描述:Phototransistor Chip Silicon NPN Transistor 800nm 2-Pin |
| NTE3122 | 制造商:NTE Electronics 功能描述:PHOTOTRANSISTOR DETECTOR NPN SILICON DARLINGTON 35V ID=10UA |
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