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参数资料
| 型号： | NTGS3433T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | MOSFET -3.3 Amps, -12 Volts P Channel TSOP6(-3.3A，-12V，P通道，TSOP-6封装的MOSFET) |
| 中文描述： | 2350 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 318G-02, TSOP-6 |
| 文件页数： | 3/5页 |
| 文件大小： | 132K |
| 代理商： | NTGS3433T1 |
NTGS3433T1
http://onsemi.com
3
Figure 1. On
Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On
Resistance vs. Gate
to
Source
Voltage
Figure 4. On
Resistance vs. Drain Current and
Gate Voltage
Figure 5. On
Resistance Variation with
Temperature
Figure 6. Capacitance Variation
0
6
1.5
10
1.75
1
0.5
V
DS,
DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
2
0
0.25
12
V
GS
=
5 V
V
GS
=
3 V
V
GS
=
3.5 V
V
GS
=
4 V
V
GS
=
2.5 V
V
GS
=
4.5 V
V
GS
=
2 V
V
GS
=
1.5 V
T
J
= 25
°
C
10
0
16
6
20
V
GS,
GATE
TO
SOURCE VOLTAGE (VOLTS)
I
D
0.5
2.5
3.5
2
1.5
3
1
T
J
= 25
°
C
T
J
= 125
°
C
T
J
=
55
°
C
V
DS
≥
10 V
0
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
2
4
6
8
V
GS,
GATE
TO
SOURCE VOLTAGE (VOLTS)
R
D
T
S
I
D
=
3.3 A
T
J
= 25
°
C
0.15
I
D,
DRAIN CURRENT (AMPS)
R
D
T
S
0
8
10
6
4
12
2
14
0.05
0.2
0
0.1
0.25
0.3
20
T
J
= 25
°
C
V
GS
=
2.5 V
V
GS
=
4.5 V
1.6
1.4
1.2
1
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
T
S
50
50
25
0
25
75
125
100
I
D
=
3.3 A
V
GS
=
4.5 V
0.8
0.6
150
0
600
1000
C
200
1200
V
DS,
DRAIN
TO
SOURCE VOLTAGE (VOLTS)
0
10
20
7.5
5
2.5
V
GS
= 0 V
T
J
= 25
°
C
8
4
0.75
1.25
18
14
12
8
4
2
4
16
18
12.5
15
17.5
800
400
C
oss
C
rss
C
iss
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3433T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET -3.3 Amps， -12 Volts |
| NTGS3433T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MOSFET -3.3 Amps, -12 Volts |
| NTGS3433T1G | 功能描述:MOSFET -12V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3441B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 |
| NTGS3441BT1G | 功能描述:MOSFET -20V -3.5A SGL P-CHN TSOP-6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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