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参数资料
| 型号： | NTGS3441T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET 1 Amp, 20 Volts |
| 中文描述： | 1650 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 318G-02, TSOP-6 |
| 文件页数： | 1/6页 |
| 文件大小： | 54K |
| 代理商： | NTGS3441T1 |
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 4
1
Publication Order Number:
NTGS3441T1/D
NTGS3441T1
Power MOSFET
1 Amp, 20 Volts
PChannel TSOP6
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP6 Surface Mount Package
PbFree Package is Available
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage Continuous
V
GS
8.0
V
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
Pulsed Drain Current (T
p
10 S)
R
JA
P
d
I
D
I
DM
244
0.5
1.65
10
°
C/W
W
A
A
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
Pulsed Drain Current (T
p
10 S)
R
JA
P
d
I
D
I
DM
128
1.0
2.35
14
°
C/W
W
A
A
Thermal Resistance
JunctiontoAmbient (Note 3)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
Pulsed Drain Current (T
p
10 S)
R
JA
P
d
I
D
I
DM
62.5
2.0
3.3
20
°
C/W
W
A
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to 150
°
C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
T
L
260
°
C
1. Minimum FR4 or G10PCB, operating to steady state.
2. Mounted onto a 2
″
square FR4 board (1
″
sq. 2 oz. cu. 0.06
″
thick single
sided), operating to steady state.
3. Mounted onto a 2
″
square FR4 board (1
″
sq. 2 oz. cu. 0.06
″
thick single
sided), t
5.0 seconds.
1 AMPERE
20 VOLTS
R
DS(on)
= 90 m
3
4
1 2 5 6
Device
Package
Shipping
ORDERING INFORMATION
NTGS3441T1
TSOP6
3000 / Tape & Reel
PChannel
TSOP6
CASE 318G
STYLE 1
MARKING
DIAGRAM
PT
W
PT
W
= Device Code
= Work Week
PIN ASSIGNMENT
3
Gate
2
1
4
Drain
Source
5
6
Drain
Drain
Drain
http://onsemi.com
NTGS3441T1G
TSOP6
(PbFree)
3000 / Tape& Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3441T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 1 Amp， 20 Volts |
| NTGS3441T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 1 Amp, 20 VoltsP−Channel TSOP−6 |
| NTGS3441T1G | 功能描述:MOSFET 20V 1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3443 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 4.4 Amps, 20 Volts |
| NTGS3443B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 |
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