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参数资料
| 型号： | NTGS3441T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET 1 Amp, 20 Volts |
| 中文描述： | 1650 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 318G-02, TSOP-6 |
| 文件页数： | 2/6页 |
| 文件大小： | 54K |
| 代理商： | NTGS3441T1 |
NTGS3441T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Notes 4 & 5)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10 A)
V
(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 20 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 20 Vdc, T
J
= 70
°
C)
I
DSS
1.0
5.0
Adc
GateBody Leakage Current
(V
GS
= 8.0
Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
GateBody Leakage Current
(V
GS
= +8.0
Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
0.45
1.05
1.50
Vdc
Static DrainSource OnState Resistance
(V
GS
= 4.5 Vdc, I
D
= 3.3 Adc)
(V
GS
= 2.5 Vdc, I
D
= 2.9 Adc)
R
DS(on)
0.069
0.117
0.090
0.135
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3.3 Adc)
g
FS
6.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
480
pF
Output Capacitance
(V
DS
= 5.0 Vdc, V
= 0 Vdc,
f = 1.0 MHz)
C
oss
265
pF
Reverse Transfer Capacitance
C
rss
100
pF
SWITCHING CHARACTERISTICS
TurnOn Delay Time
t
d(on)
13
25
ns
Rise Time
(V
DD
= 20 Vdc, I
= 1.6 Adc,
V
GS
= 4.5 Vdc, R
g
= 6.0 )
t
r
23.5
45
ns
TurnOff Delay Time
t
d(off)
27
50
ns
Fall Time
t
f
24
45
ns
Total Gate Charge
Q
tot
6.2
14
nC
GateSource Charge
(V
DS
= 10 Vdc, V
GS
= 4.5 Vdc,
I
= 3.3 Adc)
D
Q
gs
1.3
nC
GateDrain Charge
Q
gd
2.5
nC
BODYDRAIN DIODE RATINGS
Diode Forward OnVoltage
(I
S
= 1.6 Adc, V
GS
= 0 Vdc)
V
SD
0.88
1.2
Vdc
Diode Forward OnVoltage
(I
S
= 3.3 Adc, V
GS
= 0 Vdc)
V
SD
0.98
Vdc
Reverse Recovery Time
(I
S
= 1.6 Adc, dI
S
/dt = 100 A/ s)
t
rr
30
60
ns
4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge is mandatory.
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3441T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 1 Amp， 20 Volts |
| NTGS3441T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 1 Amp, 20 VoltsP−Channel TSOP−6 |
| NTGS3441T1G | 功能描述:MOSFET 20V 1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3443 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 4.4 Amps, 20 Volts |
| NTGS3443B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 |
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