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参数资料
| 型号： | NTGS3441T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET 1 Amp, 20 Volts |
| 中文描述： | 1650 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 318G-02, TSOP-6 |
| 文件页数： | 3/6页 |
| 文件大小： | 54K |
| 代理商： | NTGS3441T1 |
NTGS3441T1
http://onsemi.com
3
0
10
1.6
8
6
2
1.2
0.8
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
D
D
4
2
0
0.4
Figure 1. OnRegion Characteristics
0.4
20
16
2
2.4
1.6
1.2
2.8
12
8
4
0.8
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0
3.2
3.6
4
Figure 2. Transfer Characteristics
2
5
0.1
4
7
0.3
0.2
0
8
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
R
D
D
R
D
D
0
16
0.24
20
12
8
0.2
0.16
0.12
0.08
4
0.04
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50
0
25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
V
GS
= 10 V
V
GS
= 6 V
V
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 2 V
V
GS
= 2.5 V
V
GS
= 2.7 V
V
GS
= 3 V
V
GS
= 1.5 V
0.4
3
6
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 55
°
C
I
D
= 3.3 A
T
J
= 25
°
C
V
DS
> = 10 V
0.28
0
75
150
T
J
= 25
°
C
V
GS
= 2.5 V
V
GS
= 4.5 V
I
D
= 3.3 A
V
GS
= 4.5 V
R
D
D
R
R
D
D
0
16
0.1
20
12
8
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
D
L
10
100
1
4
Figure 6. DraintoSource Leakage Current
vs. Voltage
T
J
= 125
°
C
T
J
= 100
°
C
T
J
= 25
°
C
V
GS
= 0 V
TYPICAL ELECTRICAL CHARACTERISTICS
相关PDF资料 |
PDF描述 |
|---|---|
| NTGS3441T1G | Power MOSFET 1 Amp, 20 Volts |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3441T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 1 Amp， 20 Volts |
| NTGS3441T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 1 Amp, 20 VoltsP−Channel TSOP−6 |
| NTGS3441T1G | 功能描述:MOSFET 20V 1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3443 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 4.4 Amps, 20 Volts |
| NTGS3443B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 |
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