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| 型号： | NTGS3446 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6(5.1A,20V逻辑电平,N通道,TSOP-6封装的功率MOSFET) |
| 中文描述： | 功率MOSFET五点一安培，20伏特N通道的TSOP - 6（5.1A，20V的逻辑电平，?通道，采用TSOP - 6封装的功率MOSFET的） |
| 文件页数： | 1/5页 |
| 文件大小： | 136K |
| 代理商： | NTGS3446 |
Semiconductor Components Industries, LLC, 2006
January, 2006
Rev. 5
1
Publication Order Number:
NTGS3446/D
NTGS3446
Power MOSFET
20 V, 5.1 A Single
NChannel, TSOP6
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
Pb
Free Package is Available
Applications
Power Management in portable and battery
powered products, i.e.
computers, printers, PCMCIA cards, cellular and cordless
Lithium Ion Battery Applications
Notebook PC
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
20
V
Gate
to
Source Voltage
V
GS
±
12
V
Thermal Resistance
Junction
to
Ambient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
= 25
°
C
Pulsed Drain Current (t
p
10 s)
R
JA
P
d
I
D
I
DM
244
0.5
2.5
10
°
C/W
W
A
A
Thermal Resistance
Junction
to
Ambient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
= 25
°
C
Pulsed Drain Current (t
p
10 s)
R
JA
P
d
I
D
I
DM
128
1.0
3.6
14
°
C/W
W
A
A
Thermal Resistance
Junction
to
Ambient (Note 3)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
= 25
°
C
Pulsed Drain Current (t
p
10 s)
R
JA
P
d
I
D
I
DM
62.5
2.0
5.1
20
°
C/W
W
A
A
Source Current (Body Diode)
I
S
5.1
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR
4 or G
10PCB, operating to steady state.
2. Mounted onto a 2” square FR
4 board (1” sq. 2 oz. cu. 0.06” thick
single
sided), operating to steady state.
3. Mounted onto a 2” square FR
4 board (1” sq. 2 oz. cu. 0.06” thick
single
sided), t < 5.0 seconds.
1 2 5 6
3
N
Channel
Drain
TSOP
6
CASE 318G
STYLE 1
MARKING
DIAGRAM
446
W
= Device Code
= Work Week
PIN ASSIGNMENT
3
Gate
1
Drain
Source
4
2
Drain
Drain
5
Drain
6
4
Gate
Source
Device
Package
Shipping
ORDERING INFORMATION
NTGS3446T1
TSOP
6
TSOP
6
(Pb
Free)
3000/Tape & Reel
NTGS3446T1G
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
20 V
36 m @ 4.5 V
R
DS(on)
TYP
5.1 A
I
D
MAX
V
(BR)DSS
446
W
1
1
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3446/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 5 Amps， 20 Volts |
| NTGS3446T1 | 功能描述:MOSFET 20V 5.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3446T1G | 功能描述:MOSFET 20V 5.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3447P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 |
| NTGS3447PT1G | 功能描述:MOSFET P-CH 12V 3.4A 6-TSOP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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