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参数资料
| 型号： | NTHD3101F |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) |
| 中文描述： | 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的） |
| 文件页数： | 1/7页 |
| 文件大小： | 140K |
| 代理商： | NTHD3101F |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 3
1
Publication Order Number:
NTHD3101F/D
NTHD3101F
Power MOSFET and
Schottky Diode
20 V, FETKY , P
Channel,
4.4 A, with
4.1 A Schottky Barrier Diode, ChipFET
Features
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP
6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Independent Pinout to each Device to Ease Circuit Design
Trench P
Channel for Low On Resistance
Ultra Low V
F
Schottky
Pb
Free Packages are Available
Applications
Li
Ion Battery Charging
High Side DC
DC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Units
Drain
to
Source Voltage
Gate
to
Source Voltage
Continuous Drain
Current (Note 1)
V
DSS
V
GS
I
D
20
±
8.0
3.2
2.3
4.4
1.1
V
V
A
Steady
State
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
t
≤
5 s
Steady
State
Power Dissipation
(Note 1)
T
J
= 25
°
C
P
D
W
t
≤
5 s
2.1
13
55 to
150
Pulsed Drain Current
Operating Junction and Storage Temperature
t
p
= 10 s
I
DM
A
°
C
T
J
, T
STG
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
I
S
T
L
2.5
260
A
°
C
Symbol
V
RRM
V
R
I
F
Value
20
20
2.2
Units
V
V
V
Steady
State
T
J
= 25
°
C
t
≤
5 s
4.1
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
G
D
P
Channel MOSFET
S
C
A
Schottky Diode
20 V
20 V
85 m @
2.5 V
SCHOTTKY DIODE
64 m @
4.5 V
4.1 A
R
DS(on)
TYP
4.4 A
0.510 V
I
D
MAX
V
(BR)DSS
MOSFET
V
R
MAX
I
F
MAX
V
F
TYP
ChipFET
CASE 1206A
STYLE 3
1
8
PIN
CONNECTIONS
MARKING
DIAGRAM
1
2
3
4
8
7
6
5
8
7
6
5
4
3
2
1
C
C
D
D
A
A
S
G
D
D1 = Specific Device Code
M
= Month Code
= Pb
Free Package
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD3101FT1 | 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3101FT1G | 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3101FT3 | 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3101FT3G | 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3102C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
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