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| 型号： | NTHD3102C |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件页数： | 1/11页 |
| 文件大小： | 95K |
| 代理商： | NTHD3102C |
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 2
1
Publication Order Number:
NTHD3102C/D
NTHD3102C
Power MOSFET
Complementary, 20 V, +5.5 A /4.2 A,
ChipFET
Features
Complementary NChannel and PChannel MOSFET
Small Size, 40% Smaller than TSOP6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
This is a PbFree Device
Applications
DCDC Conversion Circuits
Load/Power Switching
Single or Dual Cell LiIon Battery Supplied Devices
Ideal for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
NCh
V
GS
8.0
V
PCh
8.0
NChannel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
4.0
A
T
A
= 85
°
C
2.9
t
≤
5 s
T
A
= 25
°
C
5.5
PChannel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
3.1
A
T
A
= 85
°
C
2.2
t
≤
5 s
T
A
= 25
°
C
4.2
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
1.1
W
t
≤
5 s
2.1
GatetoSource ESD Rating
(Human Body Model, Method 3015)
ESD
100
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
G
D
S
NChannel MOSFET
1
1
1
G
D
2
2
PChannel MOSFET
S2
ChipFET
CASE 1206A
STYLE 2
1
2
3
4
5
6
7
8
PIN CONNECTIONS
MARKING
DIAGRAM
D6
M
= Specific Device Code
= Date Code
= PbFree Package
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
(Bottom View)
(Top View)
NChannel
20 V
PChannel
20 V
37 m @ 2.5 V
29 m @ 4.5 V
64 m @ 4.5 V
83 m @ 2.5 V
R
DS(on)
TYP
5.5 A
4.2 A
I
D
MAX
(Note 1)
V
(BR)DSS
48 m @ 1.8 V
105 m @ 1.8 V
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
D
相关PDF资料 |
PDF描述 |
|---|---|
| NTHD4102P | Power MOSFET 20 V, Dual P-Channel(20V，双P通道的功率MOSFET) |
| NTHD4401PT1 | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| NTHD4401PT1G | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| NTHD4401P | Power MOSFET 20 V, Dual P-Channel, 2.1 A(2.1A，20V，双P通道的功率MOSFET) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD3102CT1G | 功能描述:MOSFET 20V 5.5A/-4.2A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET? |
| NTHD3133PFT1G | 功能描述:MOSFET PFET FETKY 20V CHIPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PFT3G | 功能描述:MOSFET -20V -4.4A P-CHANNEL W/3.7A SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4102P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
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