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参数资料
| 型号： | NTHD3102C |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件页数： | 9/11页 |
| 文件大小： | 95K |
| 代理商： | NTHD3102C |
NTHD3102C
http://onsemi.com
9
Figure 23. Thermal Response
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
2
1
0.1
0.01
10
10
10
4
3
2
1
10
1
10
100
600
Square Wave Pulse Duration (sec)
N
T
Duty Cycle = 0.5
0.2
Single Pulse
0.1
0.05
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90
°
C/W
3. T
JM
T
A
= P
DM
Z
JA(t)
4. Surface Mounted
t1
t2
PDM
Notes:
t1
t2
ORDERING INFORMATION
Device
Package
Shipping
NTHD3102CT1G
ChipFET
(PbFree)
3000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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PDF描述 |
|---|---|
| NTHD4102P | Power MOSFET 20 V, Dual P-Channel(20V，双P通道的功率MOSFET) |
| NTHD4401PT1 | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| NTHD4401PT1G | Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET |
| NTHD4401P | Power MOSFET 20 V, Dual P-Channel, 2.1 A(2.1A，20V，双P通道的功率MOSFET) |
| NTHD4P02F | Power MOSFET and Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD3102CT1G | 功能描述:MOSFET 20V 5.5A/-4.2A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET? |
| NTHD3133PFT1G | 功能描述:MOSFET PFET FETKY 20V CHIPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PFT3G | 功能描述:MOSFET -20V -4.4A P-CHANNEL W/3.7A SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4102P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
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