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参数资料
| 型号： | NTHD3102C |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件页数： | 2/11页 |
| 文件大小： | 95K |
| 代理商： | NTHD3102C |
NTHD3102C
http://onsemi.com
2
MAXIMUM RATINGS
(continued)
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
NChannel
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25
°
C
I
D
3.0
A
T
A
= 85
°
C
2.2
PChannel
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25
°
C
I
D
2.3
A
T
A
= 85
°
C
1.7
Power Dissipation (Note 3)
T
A
= 25
°
C
P
D
0.6
W
Pulsed Drain Current
NCh
tp = 10 s
I
DM
16
A
PCh
12.6
Operating Junction and Storage Temperature
T
J
, T
STG
55 to 150
°
C
Source Current (Body Diode)
I
S
1.7
A
Lead Temperature for Soldering Purposes (1/8
″
from case for 10 seconds)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient Steady State (Note 2)
R
JA
110
°
C/W
JunctiontoAmbient t
≤
5 s (Note 2)
60
JunctiontoAmbient Steady State (Note 3)
195
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Note 4)
V
(BR)DSS
N
V
GS
= 0 V
I
D
= 250 A
20
V
P
I
D
= 250 A
20
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
N
20.2
mV/
°
C
P
16.2
Zero Gate Voltage Drain Current
I
DSS
N
V
GS
= 0 V, V
DS
= 16 V
T
J
= 25
°
C
1.0
A
P
V
GS
= 0 V, V
DS
= 16 V
1.0
N
V
GS
= 0 V, V
DS
= 16 V
T
J
= 85
°
C
5.0
P
V
GS
= 0 V, V
DS
= 16 V
5.0
GatetoSource Leakage Current
I
GSS
N
V
DS
= 0 V, V
GS
=
±
8.0 V
V
DS
= 0 V, V
GS
=
±
8.0 V
±
100
nA
P
±
100
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq).
4. Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD3102CT1G | 功能描述:MOSFET 20V 5.5A/-4.2A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET? |
| NTHD3133PFT1G | 功能描述:MOSFET PFET FETKY 20V CHIPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PFT3G | 功能描述:MOSFET -20V -4.4A P-CHANNEL W/3.7A SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4102P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
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