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| 型号： | NTHD3102C |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件页数： | 7/11页 |
| 文件大小： | 95K |
| 代理商： | NTHD3102C |
NTHD3102C
http://onsemi.com
7
TYPICAL PCHANNEL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
125
°
C
0
8
5
6
6
3
2
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
D
D
4
2
0
1
Figure 12. OnRegion Characteristics
0
8
1.6
1.2
2.4
6
4
2
0.8
0
2.8
Figure 13. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
8
0.1
0.05
0.04
Figure 14. OnResistance vs. Drain Current
I
D,
DRAIN CURRENT (AMPS)
R
D
D
D
D
Figure 15. OnResistance vs. Drain Current
and Temperature
50
0
25
25
1.4
1.2
1.0
0.8
0.6
50
125
100
Figure 16. OnResistance vs. Drain Current
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
1.8 V
0.09
2
4
T
J
= 55
°
C
T
J
= 25
°
C
75
150
I
D
= 4 A
V
GS
= 4.5 V
R
D
D
R
4
25
°
C
1.6
10
6
Figure 17. OnResistance Variation with
Temperature
1.4 V
1.6 V
7
8
2 V
V
GS
= 8 V to 4 V
9
10
0.4
0
1.2 V
1.0 V
2.0
0.08
0.07
0.06
V
GS
= 4.5 V
T
J
= 55
°
C
T
J
= 125
°
C
8
0.16
0.06
0.04
I
D,
DRAIN CURRENT (AMPS)
R
D
D
0.14
2
4
T
J
= 25
°
C
10
6
0
0.12
0.10
0.08
V
GS
= 2.5 V
T
J
= 55
°
C
T
J
= 125
°
C
8
0.1
0.05
0.04
I
D,
DRAIN CURRENT (AMPS)
R
D
D
0.09
2
4
T
J
= 25
°
C
10
6
0
0.08
0.07
0.06
V
GS
= 4.5 V
V
GS
= 2.5 V
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相关代理商/技术参数 |
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| NTHD3102CT1G | 功能描述:MOSFET 20V 5.5A/-4.2A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET? |
| NTHD3133PFT1G | 功能描述:MOSFET PFET FETKY 20V CHIPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PFT3G | 功能描述:MOSFET -20V -4.4A P-CHANNEL W/3.7A SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4102P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
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