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参数资料
型号： NTHD3101F
厂商： ON SEMICONDUCTOR
英文描述： Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET)
中文描述： 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的）
文件页数： 2/7页
文件大小： 140K
代理商： NTHD3101F
NTHD3101F
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction
to
Ambient – Steady State (Note 2)
R
JA
R
JA
113
°
C/W
°
C/W
Junction
to
Ambient – t
≤
10 s (Note 2)
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
60
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
Drain
to
Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
V
(BR)DSS
/T
J
V
GS
= 0 V, I
D
=
250 A
20
V
15
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
16 V, V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
5.0
±
100
A
Gate
to
Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
8.0 V
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
V
GS(TH)
V
GS(TH)
/T
J
V
GS
= V
DS
, I
D
=
250 A
0.45
1.5
V
2.7
mV/
°
C
Drain
to
Source On
Resistance
R
DS(on)
V
GS
=
4.5, I
D
=
3.2 A
V
GS
=
2.5, I
D
=
2.2 A
V
GS
=
1.8, I
D
=
1.0 A
V
DS
=
10 V, I
D
=
2.9 A
64
85
120
8.0
80
110
170
m
Forward Transconductance
g
FS
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate
to
Source Charge
Gate
to
Drain Charge
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
10 V
680
100
70
7.4
0.6
1.4
2.5
pF
V
GS
=
4.5 V, V
=
10 V,
I
D
=
3.2 A
nC
SWITCHING CHARACTERISTICS
(Note 4)
Turn
On Delay Time
Rise Time
Turn
Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=
4.5 V, V
DD
=
10 V,
I
D
=
3.2 A, R
G
= 2.4
5.8
11.7
16
12.4
ns
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, I
S
=
2.5 A
T
J
= 25
°
C
0.8
13.5
9.5
4.0
6.5
1.2
V
ns
V
GS
= 0 V, I
S
=
1.0 A ,
dI
S
/dt = 100 A/ s
nC
Parameter
Symbol
V
F
Test Conditions
I
F
= 0.1 A
I
F
= 1.0 A
V
R
= 10 V
V
R
= 20 V
Min
Typ
0.425
0.510
Max
Units
V
Maximum Instantaneous
Forward Voltage
0.575
1.0
5.0
Maximum Instantaneous
Reverse Current
I
R
A
3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
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相关代理商/技术参数
参数描述
NTHD3101FT1 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3101FT1G 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3101FT3 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3101FT3G 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHD3102C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters
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