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参数资料
| 型号： | NTHD3101F |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) |
| 中文描述： | 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的） |
| 文件页数： | 3/7页 |
| 文件大小： | 140K |
| 代理商： | NTHD3101F |
NTHD3101F
http://onsemi.com
3
TYPICAL P
CHANNEL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
2 V
100
°
C
0
4
5
3
6
3
2
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
D
2
1
0
1
Figure 1. On
Region Characteristics
0.5
4
2
1.5
2.5
3
2
1
1
0
3
Figure 2. Transfer Characteristics
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
Figure 3. On
Resistance vs. Gate
to
Source
Voltage
I
D
D
Figure 4. On
Resistance vs. Drain Current and
Gate Voltage
50
0
25
25
1.3
1.2
1
0.8
0.7
50
125
100
Figure 5. On
Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
T
C
=
55
°
C
75
150
I
D
=
3.2 A
V
GS
=
4.5 V
R
D
D
T
S
R
4
25
°
C
1.4
2.2 V
2
4
8
10
20
16
Figure 6. Drain
to
Source Leakage Current
vs. Voltage
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
I
D
,
T
J
= 100
°
C
1.4 V
1.6 V
1.8 V
100
1000
7
8
2.6 V
V
DS
≥
10 V
6
10
18
14
V
GS
=
3 V
V
GS
=
5 V to
3.6 V
1.1
0.9
5
6
7
8
9
9
10
2.4 V
9
8
7
6
5
0
3.5
0.1
3
5
0.2
0.05
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
R
D
D
T
S
I
D,
DRAIN CURRENT (AMPS)
2
4
I
D
=
3.2 A
T
J
= 25
°
C
R
D
D
T
S
1
6
2
3
4
5
T
J
= 25
°
C
V
GS
=
4.5 V
V
GS
=
2.5 V
0.15
6
7
8
0.125
0.075
0.175
0.1
0.2
0.05
0.15
0.125
0.075
0.175
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD3101FT1 | 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3101FT1G | 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3101FT3 | 功能描述:MOSFET -20V -4.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3101FT3G | 功能描述:MOSFET -20V -4.4A P-Channel w/4.1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3102C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
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