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参数资料
| 型号： | NTGS3446 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6(5.1A,20V逻辑电平,N通道,TSOP-6封装的功率MOSFET) |
| 中文描述： | 功率MOSFET五点一安培，20伏特N通道的TSOP - 6（5.1A，20V的逻辑电平，?通道，采用TSOP - 6封装的功率MOSFET的） |
| 文件页数： | 5/5页 |
| 文件大小： | 136K |
| 代理商： | NTGS3446 |
NTGS3446
http://onsemi.com
5
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
2
3
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
A
B
C
D
G
H
J
K
L
M
S
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
MAX
3.10
1.70
1.10
0.50
1.05
0.100
0.26
0.60
1.55
10
3.00
MIN
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0
0.0985
MAX
INCHES
MILLIMETERS
0
10
0.1181
2.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
M
J
K
TSOP
6
CASE 318G
02
ISSUE N
0.95
0.037
1.9
0.075
0.95
0.037
mm
inches
SCALE 10:1
1.0
0.039
2.4
0.094
0.7
0.028
*For additional information on our Pb
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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NTGS3446/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3446/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 5 Amps， 20 Volts |
| NTGS3446T1 | 功能描述:MOSFET 20V 5.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3446T1G | 功能描述:MOSFET 20V 5.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3447P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 |
| NTGS3447PT1G | 功能描述:MOSFET P-CH 12V 3.4A 6-TSOP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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