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| 型号： | NTGS3443BT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.7A 6-TSOP |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 819pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGS3443B
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t v 5 s (Note 3)
Junction-to-Ambient – Steady State (Note 4)
Symbol
R q JA
R q JA
R q JA
Value
100
80
190
Unit
° C/W
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = -250 m A
I D = -250 m A, Reference 25 ° C
-20
-15
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
-1.0
m A
V DS = -20 V
T J = 70 ° C
-5.0
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
$ 0.1
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = -250 m A
-0.6
3.3
-1.4
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = -4.5 V, I D = -3.7 A
45
60
m W
V GS = -2.7 V, I D = -3.1 A
V GS = -2.5 V, I D = -3.0 A
65
70
90
100
Forward Transconductance
g FS
V DS = -10 V, I D =-3.7 A
7.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
819
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = -10 V
157
103
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = -4.5 V, V DS = -10 V;
I D = -3.7 A
8.0
0.6
1.7
2.4
11
11
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t d(ON)
10
15
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DD = -10 V,
I D = -1.0 A, R G = 6.0 W
7.0
47
25
11
70
40
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
-0.8
-1.2
V
I S = -1.7 A
Reverse Recovery Time
t RR
V GS = 0 V, d IS /d t = 100 A/ m s,
15
30
ns
I S = -1.7 A
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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