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参数资料
| 型号： | NTGS3443T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET 2 Amp, 20 Volts P-Channel TSOP-6(2A，20V，P通道，TSOP-6封装的功率MOSFET) |
| 中文描述： | 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 318G-02, TSOP-6 |
| 文件页数： | 2/6页 |
| 文件大小： | 136K |
| 代理商： | NTGS3443T1 |
NTGS3443T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Notes 4 & 5)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=
10 A)
V
(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
=
20 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
=
20 Vdc, T
J
= 70
°
C)
I
DSS
1.0
5.0
Adc
Gate
Body Leakage Current
(V
GS
=
12
Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
Gate
Body Leakage Current
(V
GS
= +12
Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
=
250 Adc)
V
GS(th)
0.60
0.95
1.50
Vdc
Static Drain
Source On
State Resistance
(V
GS
=
4.5 Vdc, I
D
=
4.4 Adc)
(V
GS
=
2.7 Vdc, I
D
=
3.7 Adc)
(V
GS
=
2.5 Vdc, I
D
=
3.5 Adc)
R
DS(on)
0.058
0.082
0.092
0.065
0.090
0.100
Forward Transconductance
(V
DS
=
10 Vdc, I
D
=
4.4 Adc)
g
FS
8.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
=
5.0 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
565
pF
Output Capacitance
C
oss
320
pF
Reverse Transfer Capacitance
C
rss
120
pF
SWITCHING CHARACTERISTICS
Turn
On Delay Time
(V
DD
=
20 Vdc, I
=
1.0 Adc,
V
GS
=
4.5 Vdc, R
g
= 6.0 )
t
d(on)
10
25
ns
Rise Time
t
r
18
45
ns
Turn
Off Delay Time
t
d(off)
30
50
ns
Fall Time
t
f
31
50
ns
Total Gate Charge
(V
DS
=
10 Vdc, V
GS
=
4.5 Vdc,
I
D
=
4.4 Adc)
Q
tot
7.5
15
nC
Gate
Source Charge
Q
gs
1.4
nC
Gate
Drain Charge
Q
gd
2.9
nC
BODY
DRAIN DIODE RATINGS
Diode Forward On
Voltage
(I
S
=
1.7 Adc, V
GS
= 0 Vdc)
V
SD
0.83
1.2
Vdc
Reverse Recovery Time
(I
S
=
1.7 Adc, dI
S
/dt = 100 A/ s)
t
rr
30
ns
4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge are mandatory.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3443T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 2 Amps， 20 Volts |
| NTGS3443T1G | 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3443T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTGS3443T2G | 功能描述:MOSFET PFET 20V 0.10R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3446 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 |
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