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| 型号： | NTJD4401NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 630MA SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 630mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 375 毫欧 @ 630mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 46pF @ 20V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJD4401NT1GOSDKR |
NTJD4401N, NVJD4401N
PACKAGE DIMENSIONS
SC ? 88/SC70 ? 6/SOT ? 363
CASE 419B ? 02
ISSUE W
D
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B ? 01 OBSOLETE, NEW STANDARD 419B ? 02.
H E
6
1
5
2
4
3
? E ?
b 6 PL
0.2 (0.008)
A
M
E
M
A3
L
C
MILLIMETERS
DIM MIN NOM MAX
A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3 0.20 REF
b 0.10 0.21 0.30
C 0.10 0.14 0.25
D 1.80 2.00 2.20
E 1.15 1.25 1.35
e 0.65 BSC
L 0.10 0.20 0.30
H E 2.00 2.10 2.20
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
INCHES
MIN NOM MAX
0.031 0.037 0.043
0.000 0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
A1
0.40
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your local
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NTJD4401N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJD4401NT2 | 功能描述:MOSFET 20V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4401NT2G | 功能描述:MOSFET 20V Dual N-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4401NT4 | 功能描述:MOSFET 20V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4401NT4G | 功能描述:MOSFET 20V Dual N-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD5121N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 |
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