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| 型号： | NTLGF3402PT2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.3A 6-DFN |
| 标准包装： | 3,000 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 140 毫欧 @ 2.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 10V |
| 功率 - 最大： | 1.14W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VDFN 裸露焊盘 |
| 供应商设备封装： | 6-DFN（3x3） |
| 包装： | 带卷 (TR) |
NTLGF3402P
SCHOTTKY DIODE MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Parameter
Symbol
V RRM
V R
I F
Max
20
20
2.0
Unit
V
V
A
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Ambient – Steady State (Note 2)
Junction?to?Ambient – t ≤ 10 s (Note 2)
Junction?to?Ambient – Steady State (Note 3)
Junction?to?Ambient – t ≤ 10 s (Note 3)
Symbol
R q JA
R q JA
R q JA
R q JA
Max
110
58
79
41
Unit
° C/W
° C/W
° C/W
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ?250 m A
?20
?9.0
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V DS = ?16 V, V GS = 0 V
T J = 25 ° C
T J = 125 ° C
?1.0
?5.0
m A
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
± 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Gate Threshold
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ?250 m A
?0.6
2.7
?2.0
V
mV/ ° C
Temperature Coefficient
Drain?to?Source On?Resistance
R DS(on)
V GS = ?4.5, I D = ?2.7 A
110
140
m W
V GS = ?2.5, I D = ?1.0 A
190
225
Forward Transconductance
g FS
V DS = ?10 V, I D = ?2.7 A
4.8
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
230
350
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ?10 V
105
40
225
75
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = ?4.5 V, V DS = ?10 V,
I D = ?2.7 A
3.8
0.32
0.7
1.6
10
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn?On Delay Time
t d(ON)
6.2
15
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ?4.5 V, V DD = ?16 V,
I D = ?2.7 A, R G = 2.4 W
22
25
34
30
45
60
4. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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