- 您现在的位置：买卖IC网 > Datasheet目录490 > NTLJS3113PTAG (ON Semiconductor)MOSFET P-CH 20V 3.5A 6-WDFN Datasheet资料下载
参数资料
| 型号： | NTLJS3113PTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.5A 6-WDFN |
| 产品变化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1329pF @ 16V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS3113P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t ≤ 5 s (Note 3)
Junction ? to ? Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
65
38
180
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm 2 , 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, Ref to 25 ° C
? 20
? 10.1
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = ? 16 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 1.0
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = ? 250 m A
? 0.45
? 0.67
? 1.0
V
Negative Gate Threshold
Temperature Coefficient
V GS(TH) /T J
2.68
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = ? 4.5, I D = ? 3.0 A
32
40
m W
V GS = ? 2.5, I D = ? 3.0 A
V GS = ? 1.8, I D = ? 2.0 A
V GS = ? 1.5, I D = ? 1.8 A
44
67
90
50
75
200
Forward Transconductance
g FS
V DS = ? 16 V, I D = ? 3.0 A
5.9
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 16 V
1329
213
120
pF
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = ? 4.5 V, V DS = ? 16 V,
I D = ? 3.0 A
13
1.5
2.2
2.9
14.4
15.7
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
6.9
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 3.0 A, R G = 3.0 W
17.5
60
56.5
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V SD
V GS = 0 V, IS = ? 1.0 A
T J = 25 ° C
T J = 125 ° C
? 0.78
? 0.67
? 1.2
V
Reverse Recovery Time
t RR
70.8
106
Charge Time
Discharge Time
Reverse Recovery Time
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = ? 1.0 A
14.3
56.4
44
ns
nC
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTLJS3180PZTBG | MOSFET P-CH 20V 3.5A 6-WDFN |
| NTLJS4114NT1G | MOSFET N-CH 30V 3.6A 6-WDFN |
| NTLJS4149PTBG | MOSFET P-CH 30V 4.6A SGL 6WDFN |
| NTLJS4159NT1G | MOSFET N-CH 30V 3.6A 6-WFDN |
| NTLTD7900ZR2G | MOSFET PWR N-CHAN 9A 20V 8MICRO |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJS3180PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTLJS3180PZTAG | 功能描述:MOSFET 20V UCOOL SNGL P-CH 7.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3180PZTBG | 功能描述:MOSFET 20V UCOOL SNGL P-CH 7.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJS3A18PZTWG | 制造商:ON Semiconductor 功能描述:PFET WDFN6 20V 8.4A 18MOH - Tape and Reel |
| NTLJS3A18PZTXG | 制造商:ON Semiconductor 功能描述:PFET WDFN6 20V 8.4A 18MOH - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET 2X2WDFN6 20V 18MOHM - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / PFET 2X2WDFN6 20V 18MOHM |
发布紧急采购，3分钟左右您将得到回复。