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| 型号： | NTLJS4149PTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 4.6A SGL 6WDFN |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 62 毫欧 @ 4.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 960pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJS4149P
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
65
38
180
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = -250 m A
I D = -250 m A, Ref to 25 ° C
-30
-1.8
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = -24 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
-0.1
-1.0
-1.0
-10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
± 0.1
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = -250 m A
-0.4
3.1
-1.0
V
mV/ ° C
Temperature Coefficient
Drain-to-Source On-Resistance
R DS(on)
V GS = -4.5 V, I D = -2.0 A
43
62
m W
V GS = -2.5 V, I D = -2.0 A
V GS = -4.5 V, I D = -4.5 A
56
43
75
62
Forward Transconductance
g FS
V DS = -6.0 V, I D = -3.0 A
10
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = -15 V
960
130
80
pF
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = -4.5 V, V DS = -15 V,
I D = -2.0 A
9.9
0.8
1.45
2.75
15
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t d(ON)
6.9
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DS = -15 V,
I D = -2.0 A, R G = 2.0 W
11
60
55
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = -1.5 A
T J = 25 ° C
T J = 85 ° C
-0.75
-0.65
-1.2
V
Reverse Recovery Time
t RR
35
60
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = -1.5 A
10
25
0.016
ns
m C
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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