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参数资料
| 型号： | NTLUD3A260PZTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | POWER MOSFET 20V 2A 200 M UDFN6 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN（1.6x1.6） |
| 包装： | 带卷 (TR) |
NTLUD3A260PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
R θJA
R θJA
R θJA
Max
155
100
245
Units
° C/W
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unles s otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, ref to 25 ° C
? 20
? 10
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 20 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 10
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.4
2.8
? 1.0
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 2.0 A
160
200
m W
V GS = ? 2.5 V, I D = ? 1.2 A
V GS = ? 1.8 V, I D = ? 0.24 A
V GS = ? 1.5 V, I D = ? 0.18 A
226
300
390
290
390
650
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 1.5 A
3.7
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1 MHz,
V DS = ? 10 V
V GS = ? 4.5 V, V DS = ? 10 V;
I D = ? 1.7 A
300
34
29
4.2
0.3
0.7
1.1
pF
nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t d(ON)
17.4
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 1.5 A, R G = 1 W
32.3
149
74
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
V GS = 0 V,
I S = ? 0.6 A
T J = 25 ° C
T J = 125 ° C
0.8
0.68
1.2
V
Reverse Recovery Time
t RR
10.6
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dis/dt = 100 A/ m s,
I S = ? 1.0 A
8.7
1.9
Reverse Recovery Charge
Q RR
5.1
nC
3.
4.
5.
6.
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. Cu.
Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
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