- 您现在的位置：买卖IC网 > Datasheet目录491 > NTMS4705NR2G (ON Semiconductor)MOSFET N-CH 30V 7.4A 8SOIC Datasheet资料下载
参数资料
| 型号： | NTMS4705NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.4A 8SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1078pF @ 24V |
| 功率 - 最大： | 850mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMS4705NR2GOSCT |
NTMS4705N
PACKAGE DIMENSIONS
SOIC-8
CASE 751-07
ISSUE AJ
-X-
8
A
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
-Y-
B
1
4
S
0.25 (0.010)
M
Y
M
K
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
G
STANDARD IS 751-07.
MILLIMETERS
INCHES
-Z-
H
D
C
SEATING
PLANE
0.10 (0.004)
N
X 45 _
M
J
DIM
A
B
C
D
G
H
J
MIN MAX
4.80 5.00
3.80 4.00
1.35 1.75
0.33 0.51
1.27 BSC
0.10 0.25
0.19 0.25
MIN MAX
0.189 0.197
0.150 0.157
0.053 0.069
0.013 0.020
0.050 BSC
0.004 0.010
0.007 0.010
0.25 (0.010)
M
Z Y
S
X
S
K
M
N
0.40 1.27
0 _ 8 _
0.25 0.50
0.016 0.050
0 _ 8 _
0.010 0.020
S
5.80 6.20
0.228 0.244
STYLE 12:
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
1.270
0.024
0.050
SCALE 6:1
mm
inches
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
?Literature Distribution Center for ON Semiconductor
?P.O. Box 5163, Denver, Colorado 80217 USA
? Phone : 303-675-2175 or 800-344-3860 Toll Free USA/Canada
? Fax : 303-675-2176 or 800-344-3867 Toll Free USA/Canada
? Email : orderlit@onsemi.com
N. American Technical Support : 800-282-9855 Toll Free
?USA/Canada
Europe, Middle East and Africa Technical Support:
?Phone: 421 33 790 2910
Japan Customer Focus Center
?Phone: 81-3-5773-3850
http://onsemi.com
5
ON Semiconductor Website : www.onsemi.com
Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMS4705N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTMS4706NR2G | MOSFET N-CH 30V 6.4A 8-SOIC |
| NTMS4800NR2G | MOSFET N-CH 30V 4.9A 8-SOIC |
| NTMS4801NR2G | MOSFET N-CH 30V 7.5A 8-SOIC |
| NTMS4802NR2G | MOSFET N-CH 30V 11.1A 8-SOIC |
| NTMS4807NR2G | MOSFET N-CH 30V 9.1A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4706N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8 |
| NTMS4706NR2 | 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4706NR2G | 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4800N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 |
| NTMS4800NR2G | 功能描述:MOSFET 30V 8A 0.020OHM N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。