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| 型号： | NTMSD6N303R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6A 8-SOIC |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 32 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 24V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD6N303R2GOS |
NTMSD6N303, NVMSD6N303
MOSFET ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwis e noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m A)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
30
?
?
?
?
?
30
?
?
?
?
?
1.0
20
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? State Resistance
(V GS = 10 Vdc, I D = 6 Adc)
(V GS = 4.5 Vdc, I D = 3.9 Adc)
Forward Transconductance
(V DS = 15 Vdc, I D = 5.0 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
?
1.8
4.6
0.024
0.030
10
2.5
?
0.032
0.040
?
Vdc
mV/ ° C
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 24 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
680
210
70
950
300
135
pF
SWITCHING CHARACTERISTICS (Notes 7 & 8)
Turn ? On Delay Time
t d(on)
?
9
18
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 1 A,
V GS = 10 V,
R G = 6 W )
t r
t d(off)
t f
?
?
?
22
45
45
40
80
80
Turn ? On Delay Time
t d(on)
?
13
30
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 1 A,
V GS = 4.5 V,
R G = 6 W )
t r
t d(off)
t f
?
?
?
27
22
34
50
40
70
Gate Charge
(V DS = 15 Vdc,
V GS = 10 Vdc,
I D = 5 A)
Q T
Q 1
Q 2
Q 3
?
?
?
?
19
2.4
5.0
4.3
30
?
?
?
nC
BODY ? DRAIN DIODE RATINGS (Note 7)
Diode Forward On ? Voltage
Reverse Recovery Time
(I S = 1.7 Adc, V GS = 0 V)
(I S = 1.7 Adc, V GS = 0 V, T J = 150 ° C)
(I S = 5 A, V GS = 0 V,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
?
?
?
?
?
0.75
0.62
26
11
15
1.0
?
?
?
?
Vdc
ns
Reverse Recovery Stored Charge
(I S = 5 A, dI S /dt = 100 A/ m s, V GS = 0 V)
Q RR
?
0.015
?
m C
7. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
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| NTMSD6N303R2SG | 功能描述:MOSFET NFET 30V 6A .024R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTN12 | 制造商:OTAX Corporation 功能描述: |
| NTN22 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTN32 | 制造商:OTAX Corporation 功能描述: |
| NTN4327A | 制造商:Dantona Industries 功能描述:NICKEL CADMIUM BATTERY, 7.5V, 1.8AH; Battery Capacity:1.8Ah; Battery Voltage:7.5V; Battery Technology:Nickel Cadmium; External Height:94.996mm; External Width:69.596mm; External Depth:35.56mm; Battery Terminals:Pressure Contact ;RoHS Compliant: NA |
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