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| 型号： | NTP2955 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 2.4A TO220AB |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 196 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 700pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
NTP2955
Power MOSFET
? 60 V, ? 12 A, Single P ? Channel, TO ? 220
Features
? Low R DS(on)
? Rugged Performance
? Fast Switching
? Pb ? Free Package is Available*
Applications
? Industrial
? Automotive
? Power Supplies
V (BR)DSS
? 60 V
http://onsemi.com
R DS(on) Typ
156 m W @ ? 10 V
P ? Channel
D
I D MAX
? 12 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
? 60
± 20
Unit
V
V
G
S
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
Steady
State
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
I D
P D
? 12
? 9.0
62.5
? 2.4
? 1.8
2.4
A
W
A
W
MARKING DIAGRAM &
PIN ASSIGNMENT
D
NT2955G
AYWW
3
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
I DM
T J ,
T STG
I S
? 42
? 55 to
175
? 12
A
° C
A
1
2
TO ? 220
CASE 221A
1
G D S
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = ? 30 V, V G = ? 10 V,
I PK = ? 12 A, L = 3.0 mH, R G = 3.0 W )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
216
260
mJ
° C
STYLE 5
A
Y
WW
= Assembly Location
= Year
= Work Week
THERMAL RESISTANCE RATINGS
G
= Pb ? Free Package
Parameter
Symbol
Max
Unit
Junction ? to ? Case
R q JC
2.4
° C/W
ORDERING INFORMATION
Junction ? to ? Ambient ? Steady State (Note 1)
R q JA
62.5
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
NTP2955
NTP2955G
TO ? 220
TO ? 220
(Pb ? Free)
50 Units / Rail
50 Units / Rail
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
N TP2955/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP2955G | 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP30N06 | 功能描述:MOSFET N-CH 60V 27A TO220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTP30N06L | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP30N06LG | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP30N20 | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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