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| 型号： | NTP30N06LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 15A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1150pF @ 25V |
| 功率 - 最大： | 88.2W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP30N06LGOS |
NTP30N06L, NTB30N06L
Power MOSFET
30 Amps, 60 Volts, Logic Level,
N?Channel TO?220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb?Free Packages are Available
http://onsemi.com
30 AMPERES, 60 VOLTS
R DS(on) = 46 m W
Typical Applications
D
N?Channel
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 10 M W )
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
Symbol
V DSS
V DGR
V GS
V GS
Value
60
60
" 15
" 20
Unit
Vdc
Vdc
Vdc
4
MARKING
DIAGRAMS
4
Drain
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
I D
I D
I DM
30
15
90
Adc
Apk
TO?220
CASE 221A
STYLE 5
NTx30N06LG
AYWW
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
P D
T J , T stg
88.2
0.59
?55 to
W
W/ ° C
° C
1
2
3
1
Gate
2
Drain
3
Source
+175
4
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
E AS
101
mJ
Drain
Drain
(V DD = 50 Vdc, V GS = 5.0 Vdc, L = 0.3 mH
I L(pk) = 26 A, V DS = 60 Vdc)
Thermal Resistance, Junction?to?Case R q JC 1.7 ° C/W
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 in from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
1
2
3
4
D 2 PAK
CASE 418B
STYLE 2
NTx
30N06LG
AYWW
2
1 3
Gate Source
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NTx30N06L
x
A
Y
WW
G
= Device Code
= P or B
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 4
1
Publication Order Number:
NTP30N06L/D
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| NTP30N20 | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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