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参数资料
| 型号： | NTP30N20G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 30A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 81 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2335pF @ 25V |
| 功率 - 最大： | 214W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP30N20GOS |
NTP30N20
Preferred Device
Power MOSFET
30 Amps, 200 Volts
N ? Channel Enhancement ? Mode TO ? 220
Features
? Source ? to ? Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Avalanche Energy Specified
? I DSS and R DS(on) Specified at Elevated Temperature
? Pb ? Free Package is Available*
Applications
? PWM Motor Controls
? Power Supplies
? Converters
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
30 AMPERES
200 VOLTS
68 m W @ V GS = 10 V (Typ)
N ? Channel
D
G
S
Rating
Drain ? to ? Source Voltage
Drain ? to ? Source Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
Symbol
V DSS
V DGR
V GS
V GSM
Value
200
200
" 30
" 40
Unit
Vdc
Vdc
Vdc
MARKING DIAGRAM &
PIN ASSIGNMENT
D
3
Drain Current
? Continuous @ T A 25 ° C
? Continuous @ T A 100 ° C
? Pulsed (Note 1)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
I D
I D
I DM
P D
T J , T stg
30
22
90
214
1.43
? 55 to
+175
Adc
W
W/ ° C
° C
1
2
TO ? 220
CASE 221A
STYLE 5
1
30N20G
AYWW
G D S
Single Drain ? to ? Source Avalanche Energy ?
Starting T J = 25 ° C
(V DD = 100 Vdc, V GS = 10 Vdc,
I L (pk) = 20 A, L = 3.0 mH, R G = 25 W )
E AS
450
mJ
A
Y
WW
= Assembly Location
= Year
= Work Week
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JC
R q JA
T L
0.7
62.5
260
° C/W
° C
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
NTP30N20 TO ? 220 50 Units / Rail
NTP30N20G TO ? 220 50 Units / Rail
(Pb ? Free)
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 5
1
Publication Order Number:
NTP30N20/D
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