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| 型号： | NTP30N20G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 30A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 81 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2335pF @ 25V |
| 功率 - 最大： | 214W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP30N20GOS |
NTP30N20
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(V GS = 0 Vdc, V DS = 200 Vdc, T J = 25 ° C)
(V GS = 0 Vdc, V DS = 200 Vdc, T J = 175 ° C)
Gate ? Body Leakage Current (V GS = ± 30 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
200
?
?
?
?
?
307
?
?
?
?
?
5.0
125
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS, I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? State Resistance
(V GS = 10 Vdc, I D = 15 Adc)
(V GS = 10 Vdc, I D = 10 Adc)
(V GS = 10 Vdc, I D = 15 Adc, T J = 175 ° C)
Drain ? to ? Source On ? Voltage
(V GS = 10 Vdc, I D = 30 Adc)
Forward Transconductance (V DS = 15 Vdc, I D = 15 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
?
?
2.9
? 8.9
0.068
0.067
0.200
2.0
20
4.0
?
0.081
0.080
0.240
2.5
?
Vdc
mV/ ° C
W
Vdc
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
(V DS = 160 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
?
2335
380
148
75
?
?
?
?
pF
SWITCHING CHARACTERISTICS (Notes 2 & 3)
Turn ? On Delay Time
t d(on)
?
?
10
12
?
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 100 Vdc, I D = 18 Adc,
V GS = 5.0 Vdc, R G = 2.5 W )
(V DD = 160 Vdc, I D = 30 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
?
?
?
20
70
40
82
24
88
?
?
?
?
?
?
Gate Charge
(V DS = 160 Vdc, I D = 30 Adc,
V GS = 10 Vdc)
(V DS = 160 Vdc, I D = 18 Adc,
V GS = 5.0 Vdc)
Q tot
Q gs
Q gd
?
?
?
?
?
75
48
20
16
32
100
?
?
?
?
nC
BODY ? DRAIN DIODE RATINGS (Note 2)
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 30 Adc, V GS = 0 Vdc)
(I S = 30 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 30 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.91
0.80
230
140
85
1.85
1.1
?
?
?
?
?
Vdc
ns
m C
2. Indicates Pulse Test: P. W. = 300 m s max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
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