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参数资料
| 型号： | NTNUS3171PZT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 200MA SOT-1123 |
| 标准包装： | 8,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 150mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 13pF @ 15V |
| 功率 - 最大： | 125mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-1123 |
| 供应商设备封装： | SOT-1123 |
| 包装： | 带卷 (TR) |
NTNUS3171PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t = 5 s (Note 3)
Symbol
R q JA
R q JA
Max
1000
600
Unit
° C/W
3. Surface ? mounted on FR4 board using the minimum recommended pad size, or 2
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
mm 2 ,
1 oz Cu.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = ? 250 m A
? 20
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = ? 5.0 V
V GS = 0 V, V DS = ? 5.0 V
V GS = 0 V, V DS = ? 16 V
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
? 50
? 100
? 200
nA
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 5.0 V
± 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(ON)
V GS = V DS , I D = ? 250 m A
V GS = ? 4.5 V, I D = ? 100 mA
? 0.4
? 0.7
2.0
? 1.0
3.5
V
V GS = ? 2.5 V, I D = ? 50 mA
2.6
4.0
V GS = ? 1.8 V, I D = ? 20 mA
V GS = ? 1.5 V, I D = ? 10 mA
V GS = ? 1.2 V, I D = ? 1.0 mA
3.4
4.0
6.0
5.5
7.0
W
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 125 mA
0.26
S
Source ? Drain Diode Voltage
V SD
V GS = 0 V, I S = ? 200 mA
? 0.5
? 1.4
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
13
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
f = 1 MHz, V GS = 0 V
V DS = ? 15 V
3.4
1.6
pF
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 4)
Turn ? On Delay Time
t d(ON)
30
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 15 V,
I D = ? 200 mA, R G = 2.0 W
56
196
145
ns
4. Switching characteristics are independent of operating junction temperatures
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