参数资料
型号: NTP18N06G
厂商: ON Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N-CH 60V 15A TO220AB
产品变化通告: Product Obsolescence 01/Jul/2009
产品目录绘图: MOSFET TO-220, TO-220AB
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 90 毫欧 @ 7.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 22nC @ 10V
输入电容 (Ciss) @ Vds: 450pF @ 25V
功率 - 最大: 48.4W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: NTP18N06GOS
NTP18N06, NTB18N06
32
V GS = 10 V
8V
32
V DS ≥ 10 V
9V
24
16
7V
6.5 V
6V
5.5 V
24
16
T J = 25 ° C
8
5V
4.5 V
8
T J = 100 ° C
T J = ?55 ° C
0
0
1
2
3
4
5
0
3
4
5
6
7
8
0.2
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
V GS = 10 V
0.2
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
V GS = 15 V
0.16
T J = 100 ° C
0.16
0.12
0.12
T J = 100 ° C
0.08
T J = 25 ° C
0.08
T J = 25 ° C
0.04
0
T J = ?55 ° C
0.04
0
T J = ?55 ° C
0
4
8
12
16
20
24
28
32
0
4
8
12
16
20
24
28
32
2
I D , DRAIN CURRENT (AMPS)
Figure 3. On?Resistance versus
Gate?to?Source Voltage
1000
I D , DRAIN CURRENT (AMPS)
Figure 4. On?Resistance versus Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1
I D = 7.5 A
V GS = 10 V
100
10
V GS = 0 V
T J = 150 ° C
T J = 100 ° C
0.8
0.6
?50 ?25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?to?Source Leakage Current
versus Voltage
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