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参数资料
| 型号： | NTP90N02G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 90A TO220AB |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.8 毫欧 @ 90A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2120pF @ 20V |
| 功率 - 最大： | 85W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP90N02GOS |
NTB90N02, NTP90N02
Power MOSFET
90 Amps, 24 Volts
N?Channel D 2 PAK and TO?220
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
? Pb?Free Packages are Available
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
24 V
G
R DS(on) TYP
5.0 m W @ 10 V
7.5 m W @ 4.5 V
N?Channel
D
I D MAX
90 A
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
24
Unit
Vdc
S
MARKING
Gate?to?Source Voltage
? Continuous
V GS
" 20
Vdc
4
DIAGRAMS
4
Drain Current
Drain
? Continuous @ T A = 25 ° C
? Single Pulse (t p = 10 m s)
I D
I DM
90*
200
A
A
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature
P D
T J , T stg
85
0.66
?55 to +150
W
W/ ° C
° C
TO?220AB
CASE 221A
STYLE 5
NTx90N02
AYWW
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
E AS
733
mJ
1
2
3
1
3
(V DD = 28 Vdc, V GS = 10 Vdc,
L = 5.0 mH, I L(pk) = 17 A, RG = 25 W )
Thermal Resistance
° C/W
Gate
2
Drain
Source
Junction?to?Case
Junction?to?Ambient (Note 1)
R q JC
R q JA
1.55
70
4
Drain
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
1
2
4
D 2 PAK
CASE 418B
STYLE 2
NTx90N02
AYWW
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
3
reliability may be affected.
1. When surface mounted to an FR4 board using 1 ″ pad size, (Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in 2 ).
*Chip current capability limited by package.
NTx90N02
x
= Device Code
= P or B
1
Gate
2
Drain
3
Source
A
Y
WW
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
March, 2005 ? Rev. 2
1
Publication Order Number:
NTB90N02/D
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