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| 型号： | NTQD6968N |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 6.2A 8TSSOP |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 100 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 630pF @ 16V |
| 功率 - 最大： | 1.39W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 管件 |
NTQD6968N
Power MOSFET
7.0 A, 20 V, Common Drain,
Dual N?Channel, TSSOP?8
Features
http://onsemi.com
?
?
?
?
?
?
?
Low R DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
3 mm Wide TSSOP?8 Surface Mount Package
High Speed, Soft Recovery Diode
TSSOP?8 Mounting Information Provided
Pb?Free Package is Available
V (BR)DSS R DS(on) TYP
20 V 17 m W @ 4.5 V
N?Channel
D
I D MAX
7.0 A
N?Channel
D
Applications
? Battery Protection Circuits
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G1
G2
Rating
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
Drain Current
? Continuous @ T A 25 ° C (Note 1)
? Continuous @ T A 70 ° C (Note 1)
Symbol
V DSS
V GS
I D
I D
Value
20
" 12
7.0
5.6
Unit
Vdc
Vdc
Adc
8
S1
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
D S2 S2 G2
? Pulsed (Note 3)
I DM
20
Total Power Dissipation @ T A 25 ° C (Note 1)
Drain Current
? Continuous @ T A 25 ° C (Note 2)
? Continuous @ T A 70 ° C (Note 2)
? Pulsed (Note 3)
P D
I D
I D
I DM
1.81
6.2
4.9
18
W
Adc
1
TSSOP?8
CASE 948S
PLASTIC
1
E68
YWW
A G
D S1 S1 G1
Total Power Dissipation @ T A 25 ° C (Note 2)
Operating and Storage Temperature Range
P D
T J , T stg
1.39
?55 to
W
° C
E68
A
= Specific Device Code
= Assembly Location
+150
Y
= Year
Thermal Resistance ?
Junction?to?Ambient (Note 1)
R q JA
69
° C/W
WW
G
= Work Week
= Pb?Free Package
Junction?to?Ambient (Note 2)
90
Maximum Lead Temperature for Soldering Pur-
poses for 10 seconds
TL
260
° C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2 ″ square FR?4 Board
(1 in sq, 2 oz. Cu 0.06 ″ thick single sided), t ≤ 10 sec.
2. Mounted onto a 2 ″ square FR?4 Board
(1 in sq, 2 oz. Cu 0.06 ″ thick single sided), Steady State.
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
Device
NTQD6968N
NTQD6968NR2
NTQD6968NR2G
Package
TSSOP?8
TSSOP?8
TSSOP?8
(Pb?Free)
Shipping ?
100 Units / Rail
4000/Tape & Reel
4000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
May, 2006 ? Rev. 3
1
Publication Order Number:
NTQD6968N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTQD6968NR2 | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTQD6968NR2G | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTQD6968R2 | 功能描述:MOSFET PWR N-CH 6.6A 20V 8TSSOP RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| NTQS6463 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTQS6463/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 6.2 Amps， 20 Volts |
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