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| 型号： | NTQS6463R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 6.8A 8-TSSOP |
| 产品变化通告： | Product Discontinuation 02/Jan/2007 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 6.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 5V |
| 功率 - 最大： | 1.39W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
| 其它名称： | NTQS6463R2OS |
NTQS6463
Power MOSFET
?20 V, ?6.8 A, P?Channel TSSOP?8
Features
? New Low Profile TSSOP?8 Package
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Diode Exhibits High Speed, Soft Recovery
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperatures
Applications
? Power Management in Portable and Battery?Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
?
Lithium Ion Battery Applications
?
Note Book PC
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
?20 V
G
http://onsemi.com
R DS(on) TYP
20 m W @ ?10 V
P?Channel
D
I D MAX
?6.8 A
Rating
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
?20
" 12
Unit
V
V
S
MARKING
Drain Current (Note 1)
? Continuous @ T A = 25 ° C
? Continuous @ T A = 70 ° C
? Pulsed (Note 3)
Total Power Dissipation (Note 1)
@ T A = 25 ° C
I D
I D
I DM
P D
?5.5
?4.4
" 30
0.93
A
W
8
1
TSSOP?8
CASE 948S
PLASTIC
DIAGRAM
463
YWW
N
Drain Current (Note 2)
? Continuous @ T A = 25 ° C
? Continuous @ T A = 70 ° C
? Pulsed (Note 3)
Total Power Dissipation (Note 2)
@ T A = 25 ° C
I D
I D
I DM
P D
?6.8
?5.4
" 30
1.39
A
W
463
Y
WW
N
= Device Code
= Year
= Work Week
= MOSFET
Operating and Storage
T J , T stg
?55 to
° C
PIN ASSIGNMENT
Temperature Range
+150
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 40 V, I L = 18.4 A,
L = 5.0 mH, R G = 25 W )
Thermal Resistance ?
E AS
R q JA
845
mJ
° C/W
D
S
S
G
2
3
4
1
8
7
6
5
D
S
S
D
Junction?to?Ambient (Note 1)
Junction?to?Ambient (Note 2)
134
90
Top View
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
ORDERING INFORMATION
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum 3 ″ X 3 ″ FR?4 board, steady state.
2. Mounted on 1 ″ square (1 oz.) board, steady state.
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
Device
NTQS6463
NTQS6463R2
Package
TSSOP?8
TSSOP?8
Shipping ?
100 Units/Rail
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2004
September, 2004 ? Rev. 2
1
Publication Order Number:
NTQS6463/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTQS6466 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6.8A I(D) | SO |
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| NTR0202PL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package |
| NTR0202PL/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 400 mA 20 V P-Channel SOT-23 |
| NTR0202PL_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package |
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