参数资料
型号: NTQS6463R2
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 20V 6.8A 8-TSSOP
产品变化通告: Product Discontinuation 02/Jan/2007
标准包装: 4,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 20 毫欧 @ 6.8A,4.5V
Id 时的 Vgs(th)(最大): 900mV @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 5V
功率 - 最大: 1.39W
安装类型: 表面贴装
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
其它名称: NTQS6463R2OS
NTQS6463
10
?2.2 V
16
8
?2.4 V
?2.8 V
?4 V
?2 V
T J = 25 ° C
12
V DS ≥ ?10 V
6
?6 V
?10 V
?1.8 V
8
T J = 25 ° C
4
T J = 100 ° C
2
?1.6 V
4
T J = ?55 ° C
V GS = ?1.4 V
0
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
0
0.5
1
1.5
2
2.5
0.05
?V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 1. On?Region Characteristics
0.03
?V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
T J = 25 ° C
0.04
I D = ?7.4 A
T J = 25 ° C
0.025
V GS = ?2.5
0.03
0.02
0.02
V GS = ?4.5
0.01
0
0.015
0.01
0
2
4
6
8
10
2
4
6
8
10
12
14
1.6
?V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 3. On?Resistance versus
Gate?to?Source Voltage
1000
?I D , DRAIN CURRENT (A)
Figure 4. On?Resistance versus Drain Current
and Gate Voltage
V GS = 0 V
1.4
I D = ?7.4 A
V GS = ?4.5 V
T J = 125 ° C
1.2
100
1
0.8
0.6
10
T J = 100 ° C
?50
?25
0
25
50
75
100
125
150
4
8
12
16
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation versus
Temperature
http://onsemi.com
3
?V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 6. Drain?to?Source Leakage Current
versus Voltage
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